Original: $5.40
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$1.62The Story
7Semi UCC21220 Dual-channel Isolated Gate Driver Breakout
The 7Semi UCC21220 Dual-Channel Isolated Gate Driver Breakout is a high-performance isolated gate driver module designed to provide safe and efficient driving of power MOSFETs and GaN FETs in modern power electronics systems. Many microcontrollers and control boards cannot directly drive high-voltage gates or handle fast switching signals without isolation; this board solves that by offering galvanic isolation between the control logic and the power stage. This ensures reliable operation, protects sensitive components, and reduces noise interference in demanding applications.
Featuring dual channels with robust isolation and wide input ranges, this breakout simplifies the implementation of isolated MOSFET gate driving in converters, inverters, motor drives, and power supplies. Its compact design and ease of integration make it suitable for students learning power electronics, hobbyists building advanced projects, and professionals developing prototypes or industrial systems. With strong performance and reliable protection, it helps improve overall system efficiency and safety wherever isolated high-speed switching is needed.
Features:
- Advanced basic and functional isolation for safe and efficient power transfer
- Fast and precise switching with 40 ns max propagation delay, 5 ns delay matching, and low pulse-width distortion
- High output drive strength with 4 A peak source and 6 A peak sink capability
- Built-in protection features including UVLO, active pulldown, and input transient rejection
- Supports high-side, low-side, and half-bridge configurations
- Ideal for driving MOSFETs and GaN FETs in demanding power applications
Details & Craftsmanship
Every detail has been carefully considered to bring you the perfect product.
Details & Craftsmanship
Every detail has been carefully considered to bring you the perfect product.
Description
7Semi UCC21220 Dual-channel Isolated Gate Driver Breakout
The 7Semi UCC21220 Dual-Channel Isolated Gate Driver Breakout is a high-performance isolated gate driver module designed to provide safe and efficient driving of power MOSFETs and GaN FETs in modern power electronics systems. Many microcontrollers and control boards cannot directly drive high-voltage gates or handle fast switching signals without isolation; this board solves that by offering galvanic isolation between the control logic and the power stage. This ensures reliable operation, protects sensitive components, and reduces noise interference in demanding applications.
Featuring dual channels with robust isolation and wide input ranges, this breakout simplifies the implementation of isolated MOSFET gate driving in converters, inverters, motor drives, and power supplies. Its compact design and ease of integration make it suitable for students learning power electronics, hobbyists building advanced projects, and professionals developing prototypes or industrial systems. With strong performance and reliable protection, it helps improve overall system efficiency and safety wherever isolated high-speed switching is needed.
Features:
- Advanced basic and functional isolation for safe and efficient power transfer
- Fast and precise switching with 40 ns max propagation delay, 5 ns delay matching, and low pulse-width distortion
- High output drive strength with 4 A peak source and 6 A peak sink capability
- Built-in protection features including UVLO, active pulldown, and input transient rejection
- Supports high-side, low-side, and half-bridge configurations
- Ideal for driving MOSFETs and GaN FETs in demanding power applications
